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| 30QWK2CZ47 TOSHIBA Schottky Barrier Rectifier Stack Trench Schottky Barrier Type 30QWK2CZ47 Switching Type Power Supply Application Converter & Chopper Application * * * * Repetitive peak reverse voltage: VRRM = 120 V Peak Forward Voltage: VFM = 0.85 V (max) Average output recified current: IO = 30 A Low switching losses and output noise. Maximum Ratings Characteristics Repetitive peak reverse voltage Average output recified current Peak one cycle surge forward current (non-repetitive, sine wave) Junction temperature Storage temperature range Screw Torque Symbol VRRM IO IFSM Tj Tstg Rating 120 30 250 (50 Hz) -40~150 -40~150 0.6 Unit V A A C C Nm Electrical Characteristics (Ta = 25C) Characteristics Peak forward voltage Repetitive peak reverse current Junction capacitance Thermal resistance Symbol VFM IRRM Cj Rth (j-c) Test Condition IFM = 15 A VRRM = Rated (120 V) VR = 10 V, f = 1.0 MHz DC Total, Junction to case Min Typ. 227 Max 0.85 50 2.5 Unit V A pF C/W Note: VFM, IRRM, Cj: A value of one cell. 961001EAA1 * TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 2000-05-08 1/4 30QWK2CZ47 Polarity Marking 1 2 1 2 3 MARK None 30QWK2C TYPE 30QWK2CZ47 3 Lot Number Month (starting from alphabet A) Year (last number of the christian era) Handling Precaution Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to other rectifier products. This current leakage and not proper operating temperature or voltage may cause thermal run. Please take forward and reverse loss into consideration when you design. 2000-05-08 2/4 30QWK2CZ47 iF - vF 100 One sell 32 28 24 20 16 12 8 PF (AV) - Io 180 120 90 60 = 30 Rectangular waveform (one cell) Instantaneous forward current iF (A) Tj = 150C 10 100C 75C 25C 1 Average forward power dissipation PF (AV) (W) 0 360 4 0 0 Conduction angle 4 8 12 16 20 24 28 32 36 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Instantaneous forward voltage vF (V) Average output rectified current Io (A) Tc max - Io 160 140 120 100 80 60 40 0 360 20 0 0 Conduction angle 4 8 12 16 20 24 28 32 36 = 30 Rectangular waveform (one cell) 60 90 120 180 320 280 240 200 160 120 80 40 0 1 Surge forward current (non-repetitive) Ta = 25C Single phase full Sine wave f = 50 Hz One sell Average forward power dissipation Tc max (C) Surge forward current IFSM (A) 3 5 10 30 50 100 Average output rectified current Io (A) Number of cycles rth (j-c) - t 10 One sell 500 1000 Cj - VR (typical) f = 1 MHz (pF) 5 Ta = 25C One cell Transient thermal impedance rth (j-c) (C/W) 3 300 1 Junction capacitance Cj 0.01 0.1 1 10 100 100 0.5 0.3 50 30 0.1 0.001 10 1 3 5 10 30 50 100 Time t (s) Reverse voltage VR (V) 2000-05-08 3/4 30QWK2CZ47 IR - Tj 100 (typical) 3.2 Rectangular waveform 0 2.4 VR 2.0 1.6 1.2 0.8 0.4 0 0 120 60 Conduction angle Tj = 150C 180 360 PR (AV) - VR (typical) (mA) Pulse measurement 10 50 30 1 VR = 10 V Repetitive peak reverse current IR Average reverse power dissipation PR (AV) (W) (one cell)) 100 120 2.8 DC 300 240 0.1 0.01 0.001 0 20 40 60 80 100 120 140 160 20 40 60 80 100 120 Junction temperature Tj (C) Reverse voltage VR (V) 2000-05-08 4/4 |
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